| PART |
Description |
Maker |
| FDFMA2P029Z08 FDFMA2P029Z |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.1A, 95m
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.1A, 95m
|
Fairchild Semiconductor
|
| FDFMA3N10908 |
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| FDFME3N311ZT |
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ
Integrated N-Channel PowerTrench垄莽 MOSFET and Schottky Diode 30 V, 1.6 A, 299 m楼?
|
Fairchild Semiconductor
|
| FDFS2P106A FDFS2P106ANL |
Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode
Integrated 60V P-Channel PowerTrench剖 MOSFET and Schottky Diode
Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode
Integrated 60V P-Channel PowerTrench?/a> MOSFET and Schottky Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SK2142 2SK1884 2SK1893 2SJ269 2SK1892 2SK1885 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 22A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 9A条（丁）|20CI
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 16A条（丁）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 5.5AI（四）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 7A条（丁）| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 8A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-220AB
|
Molex, Inc.
Sanyo Electric Co., Ltd.
|
| FDFME3N311ZT |
Integrated N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor
|
| IR3558 IR3558MTRPBF IR3558-15 |
The IR3558 integrated PowIRstage? is a synchronous buck gate driver co-packed with a control MOSFET and a synchronous MOSFET with integrated Schottky diode.
45A Integrated PowIRstage
|
International Rectifier
|
| FDFMA2P853 |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| FDFMA2N028Z |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
